SI2307 डाटा शीट PDF( Datasheet )

Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (

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SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), [email protected], [email protected] < 87m Ω Features Advanced trench process technology High Density Cell Design For

New Product P-Channel 30-V (D-S) MOSFET Si2307CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.088 at VGS = - 10 V 0.138 at VGS = - 4.5 V TO-236 (SOT-23) ID (A)a, b - 2.7 - 2.2 Qg (Typ.)

Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.080 @ VGS = –10 V 0.140 @ VGS = –4.5 V ID (A) –3 –2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307