डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SI2302DS | N-Channel MOSFET SMD Type
N-Channel Enhancement MOSFET SI2302DS (KI2302DS)
■ Features
● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1 |
Kexin |
|
SI2302DS | N-channel FET SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using Tren |
NXP |
|
SI2302DS | N-Channel MOSFET Si2302DS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.085 @ VGS = 4.5 V 20
0.115 @ VGS = 2.5 V
ID (A)
2.8 2.4
TO-236 (SOT-23)
G1 S2
3D
Top View Si2302DS (A2)* * |
Vishay |
|
SI2302DS-HF | N-Channel MOSFET SMD Type
N-Channel MOSFET SI2302DS-HF (KI2302DS-HF)
■ Features
● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−Free Package May be Available. The G−Suffix D |
Kexin |
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