डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SI2302 | N-channel MOSFET Features
• Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen |
MCC |
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SI2302 | 20V N-Channel MOSFET SI2302
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultr |
JinYu |
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SI2302 | 20V N-Channel MOSFET 20V N-Cha
SI2302
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
3.6A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package D |
VTR |
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SI2302 | N-channel MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2302 N-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
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YANGJING |
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SI2302A | N-Channel MOSFET MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
SI2302A
Features
• Halogen free available upon request |
MCC |
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SI2302ADS | N-Channel MOSFET N-Channel 2.5-V (G-S) MOSFET
Si2302ADS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.060 at VGS = 4.5 V 0.115 at VGS = 2.5 V
ID (A) 2.4 2.0
FEATURES
• Halogen-free According to IEC 61249-2 |
Vishay Siliconix |
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SI2302CDS | N-Channel MOSFET www.vishay.com
Si2302CDS
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
FEATURES
• TrenchFET® power MOSFET
• Material categorization: for definitions of compliance please see www.v |
Vishay |
www.DataSheet.in | 2017 | संपर्क |