SFH483 डाटा शीट PDF( Datasheet )

GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseb

GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 ø0.45 Chip position 1 0.9 .1 1.1 .9 0 ø5.5 ø5.2 2.7 1 2.54 mm spacing 14.5 12.5 3.6 3.0 ø4.3 ø4.1 Anode (LD 242, BPX 63, SFH 464) Catho

2007-12-07 GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 483 E7800 Features: • Fabricated in a liquid phase epitaxy process • Anode is electrically connected to the case • High reliabi