| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
Power Transistor 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4) Lead Free/RoHS Compliant. 2SD1898 (SC-62) |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS ons Value Min. Typ. Max. Unit BVCES BVCEO BVEBO hFE IC = 100mA IC = 200mA IE = 10mA VCE = 6V VBE = 0V IB = 0mA IC = 0mA IC = 1.4A 110 55 4.0 19 — — — — — — — 50 V V V — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT G P* IMD* |
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Guangdong Kexin Industrial |
Power Transistor High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . +0.2 9.70 -0.2 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Low VCE (sat) . Epitaxial planer type NPN silicon transisto |
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