डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SCTW60N120G2 | Silicon carbide Power MOSFET SCTW60N120G2
Datasheet
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package
HiP247
3 2 1
D(2, TAB)
Features
Order code
VDS
RDS(on) max.
ID
SCTW60N120G2
1200 V
52 mΩ
60 A
� |
STMicroelectronics |
|
SCTW60N120G2AG | Automotive-grade silicon carbide Power MOSFET SCTW60N120G2AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
Features
Order code SCTW60N120G2AG
VDS 1200 V
RDS(on) typ. 45 mΩ
ID 52 |
STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |