डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SCTH90N65G2V-7 | Silicon carbide Power MOSFET SCTH90N65G2V-7
Datasheet
Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N- |
STMicroelectronics |
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SCTH90N65G2V-7 | Silicon carbide Power MOSFET | STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |