डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SCTH35N65G2V-7 | Silicon carbide Power MOSFET SCTH35N65G2V-7
Datasheet
Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Features
Order code
VDS
SCTH35N65G2V-7
650 V
• Very fast |
STMicroelectronics |
|
SCTH35N65G2V-7AG | Automotive-grade silicon carbide Power MOSFET SCTH35N65G2V-7AG
Datasheet
Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N- |
STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |