SCT3060 डाटा शीट PDF( Datasheet )

isc N-Channel SiC SMOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for

SCT3060ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 60mΩ 39A 165W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures 1) Qualified to AEC-Q101 2) Low on-res

SCT3060AR N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 60mΩ 39A 165W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fas