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S5812 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
SiSS5812DN

Vishay
N-Channel MOSFET

• TrenchFET® Gen V power MOSFET
• Very low RDS x Qg figure-of-merit (FOM)
• Tuned for the lowest RDS x Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D
Datasheet
2
AMS5812

Analog Microelectronics
Amplified pressure sensor

• Amplified, calibrated and temperature compensated pressure sensor
• Differential/relative, bidirectional differential, absolute and barometric versions
• Ratiometric analog voltage output of 0.5
  – 4.5V
• Digital output for pressure and temperature
Datasheet
3
VS5812AE

Vanguard Semiconductor
N-Channel Advanced Power MOSFET

 N-Channel,5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VS5812AE 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TY
Datasheet
4
VS5812AP

Vanguard Semiconductor
N-Channel Advanced Power MOSFET

 N-Channel,5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VS5812AP 55V/31A N-Channel Advanced Power MOSFET V DS R @DS(on),TY
Datasheet
5
VS5812AI

Vanguard Semiconductor
N-Channel Advanced Power MOSFET

 N-Channel,5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VS5812AI 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),
Datasheet
6
VS5812AS

Vanguard Semiconductor
N-Channel Advanced Power MOSFET

 N-Channel,5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VS5812AS 58V/12A N-Channel Advanced Power MOSFET V DS R @DS(on),TY
Datasheet
7
VS5812AD

Vanguard Semiconductor
N-Channel Advanced Power MOSFET

 N-Channel,5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VS5812AD 55V/50A N-Channel Advanced Power MOSFET V DS R @DS(on),
Datasheet
8
S5812

Bothhandusa
DIGITAL AUDIO DATA TRANSFORMER
l l l l l For use with Crystal Semiconductor’s CS8401,CS8402 for ICs. Operating transmission rates : 1 to 7 Mbps. Return Loss (100 KHz to 10 MHz) : -22dB Min Operation temperature range: 0 ° C to +70° C. Storage temperature range: -25¢J to +125¢J.
Datasheet



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