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Hynix Semiconductor |
4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32) [ CI-MCP ] ● Operation Temperature - (-25)oC ~ 85oC ● Package - 162-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ LPDDR2 S4B ] ● Packaged NAND flash memory with MultiMediaCard interface ● e-NAND system specificati |
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Hynix Semiconductor |
LPDDR2-S4B 8Gb |
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Atmel |
SMART ARM-based Flash MCU up to 2048 Kbytes of Flash, with optional dual-bank implementation and cache memory, and up to 160 Kbytes of SRAM. The peripheral set includes a full-speed USB Device port with embedded transceiver, a high-speed MCI for SDIO/SD/MMC, an External Bus I |
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International Rectifier |
Insulated Gate Bipolar Transistor C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free G E n-channel IC = 7.6A, TC=1 |
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Littelfuse |
100A SIDACtor Component and Benefits • Low voltage overshoot • Low on-state voltage • Does not degrade surge capability after multiple surge events within its ratings. • Fails short circuit when surged in excess of ratings • Low capacitance • 4kV 10/700 surge protect |
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Atmel |
SMART ARM-based Flash MCU up to 256 Kbytes of Flash and up to 48 Kbytes of SRAM. The peripheral set includes a Full Speed USB Device port with embedded transceiver, a High Speed MCI for SDIO/SD/MMC, an External Bus Interface featuring a Static Memory Controller providing conn |
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Mitsubishi Electric |
16-Bit CMOS Microcomputer et4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee |
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Mitsubishi Electric |
(M37702M4AXXXFP / M37702M4BXXXFP) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
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Taiwan Semiconductor |
(TS4B01G - TS4B07G) Glass Passivated Bridge Rectifiers UL Recoganized File # E-326243 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters laboratory Flammability Classification 94V-0 Surge overload rating to 120 ampere |
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Mitsubishi |
16-BIT CMOS MICROCOMPUTER qNumber of basic instructions .................................................. 103 qMemory size RAM ................................................ 2048 bytes qInstruction execution time The fastest instruction at 25 MHz frequency ................ |
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Taiwan Semiconductor |
(TS4B01G - TS4B07G) Glass Passivated Bridge Rectifiers UL Recoganized File # E-326243 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters laboratory Flammability Classification 94V-0 Surge overload rating to 120 ampere |
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Taiwan Semiconductor |
(TS4B01G - TS4B07G) Glass Passivated Bridge Rectifiers UL Recoganized File # E-326243 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters laboratory Flammability Classification 94V-0 Surge overload rating to 120 ampere |
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Taiwan Semiconductor |
(TS4B01G - TS4B07G) Glass Passivated Bridge Rectifiers UL Recoganized File # E-326243 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters laboratory Flammability Classification 94V-0 Surge overload rating to 120 ampere |
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GME |
Silicon Bridge Rectifiers z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost construction utilizing molded plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 GBS4A--GBS4M Pb Lead-free Maximum Rati |
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SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch speed automa |
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SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch speed automa |
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SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch speed automa |
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Mitsubishi |
16-BIT CMOS MICROCOMPUTER qNumber of basic instructions .................................................. 103 qMemory size RAM ................................................ 2048 bytes qInstruction execution time The fastest instruction at 25 MHz frequency ................ |
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Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi • Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) • Supply voltage Vcc=2.7 ~ 3.6V 16M- |
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Renesas |
CMOS SRAM 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SR |
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