डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
S1T | Surface Mount Glass Passivated Rectifier SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S1T ~ S1Y
Surface Mount Glass Passivated Rectifier
Features
Plastic package has Underwriters Laboratory flammability Classification 94V-0 Built-in strain relie |
MEI SEMI |
|
S1T | Standard Recovery SMD Rectifier Diodes S1A ... S1Y
S1A ... S1Y Standard Recovery SMD Rectifier Diodes SMD-Gleichrichterdioden mit Standard-Sperrverzug
IFAV = 1 A VF < 1.1 V Tjmax = 150°C
VRRM = 50...2000 V IFSM = 30/32 A trr ~ 1500 ns
Version 2 |
Diotec |
|
S1T | SURFACE MOUNT HIGH VOLTAGE RECTIFIER www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
S1T
PRV : 3000 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse curr |
EIC |
|
S1T2410B01 | bipolar integrated circuit designed as a telephone bell replacement TONE RINGER
S1T2410B01/B02
INTRODUCTION
The S1T2410B01/B02 is a bipolar integrated circuit designed as a telephone bell replacement.
8−DIP−300
FUNCTIONS
• • • Two oscillators Output amplifier Powe |
Samsung semiconductor |
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S1T2410B02 | bipolar integrated circuit designed as telephone bell replacement TONE RINGER
S1T2410B01/B02
INTRODUCTION
The S1T2410B01/B02 is a bipolar integrated circuit designed as a telephone bell replacement.
8−DIP−300
FUNCTIONS
• • • Two oscillators Output amplifier Powe |
Samsung semiconductor |
|
S1T2418D02 | TONE RINGER TONE RINGER WITH DRIDGE DIODE
INTRODUCTION
The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge diode. When coupled with an appropriate transducer, it replaces the electro-me |
Samsung semiconductor |
|
S1T2418G01 | TONE RINGER TONE RINGER WITH DRIDGE DIODE
S1T2418G01/D02
INTRODUCTION
The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge diode. When coupled with an appropriate transducer, it replace |
Samsung semiconductor |
www.DataSheet.in | 2017 | संपर्क |