डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
S-LSI1012LT1G | N-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 |
LRC |
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S-LSI1012LT1G | N-Channel 1.8-V (G-S) MOSFET | LRC |
www.DataSheet.in | 2017 | संपर्क |