डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RZ1200 | Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor
Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) |
Sanken electric |
|
RZ1214B35Y | NPN microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave powe |
NXP |
|
RZ1214B65Y | NPN microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D034
RZ1214B65Y NPN microwave power transistor
Product specification Supersedes data of 1997 Feb 18 1999 Dec 24
Philips Semiconductors
Product specification
|
NXP |
|
RZ1235 | Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor
VZ (V) 27 to 33 34 to 40 50 to 60 60 to 70 90 to 110 115 to 135 140 to 160 125 150 to 165 165 to 185 185 to 215 220 to 250 235 to 265 138.7 150 180 179.5 190 VRDC (V) ( |
ETC |
www.DataSheet.in | 2017 | संपर्क |