डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RU3 | Fast-Recovery Rectifier Diodes RU3 - RU3C
PRV : 400 - 1000 Volts Io : 1.5 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for h |
Sanken electric |
|
RU3 | FAST RECOVERY RECTIFIER DIODES www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RU3 - RU3A
PRV : 400 - 600 Volts Io : 1.5 Amperes
FAST RECOVERY RECTIFIER DIODES
D2A
FEATURES :
* High current capability * High surge curren |
EIC |
|
RU3 | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Vol |
WEJ |
|
RU30 | Fast-Recovery Rectifier Diodes |
Sanken electric |
|
RU30100L | N-Channel Advanced Power MOSFET RU30100L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avala |
Ruichips |
|
RU30100R | N-Channel Advanced Power MOSFET RU30100R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanc |
Ruichips |
|
RU30105L | N-Channel Advanced Power MOSFET RU30105L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and G |
Ruichips |
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