RU2H50R डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤43mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an

RU2H50R N-Channel Advanced Power MOSFET MOSFET Features • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V • Low Gate Charge • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lea