RU2 डाटा शीट PDF( Datasheet )

RU2 - RU2Z PRV : 200 - 800 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for hig

RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave Voltage Current Superimposed Maximum Forward Vol

RU20120L N-Channel Advanced Power MOSFET Features • 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested

RU20130L N-Channel Advanced Power MOSFET MOSFET Features • 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avala

RU2013H N-Channel Advanced Power MOSFET MOSFET Features • 20V/13A, RDS (ON) =13mΩ (Typ.) @ VGS=10V RDS (ON) =16mΩ (Typ.) @ VGS=4.5V RDS (ON) =22mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design �

RU2020H N-Channel Advanced Power MOSFET MOSFET Features • 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design