RU1 डाटा शीट PDF( Datasheet )

Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A

www.eicsemi.com RU1 - RU1B PRV : 400 - 800 Volts Io : 0.25 Ampere TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES D2 FEATURES : * High current capability * High surge current

RU1088R N-Channel Advanced Power MOSFET Features • 100V/80A RDS (ON)=10mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100%

RU120N15Q N-Channel Advanced Power MOSFET Features · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive appli

RU120N15R N-Channel Advanced Power MOSFET Features · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive appli

RU12200R N-Channel Advanced Power MOSFET Features • 120V/200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V • Reliable and Rugged • Ultra Low On-Resistance • 100% avalanche tested • 175°C Operating Temperature

RU140N10R N-Channel Advanced Power MOSFET Features • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Switching and Fully Avalanche Rated • 100% avalanche