डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQK0604IGDQA | Silicon N-Channel MOSFET RQK0604IGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A)
• Low drive current • High speed switching • VDSS ≥ 60 V and capabl |
Renesas Technology |
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RQK0604IGDQA | Silicon N-Channel MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |