डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQK0601AGDQS | N-Channel MOSFET RQK0601AGDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A)
• Low drive current • High speed switching • 4.5 V gate drive
Outline
R |
Renesas |
|
RQK0601AGDQS | N-Channel MOSFET | Renesas |
www.DataSheet.in | 2017 | संपर्क |