डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQJ0603LGDQA | Silicon P Channel MOS FET Power Switching RQJ0603LGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A)
• Low drive current • High speed switching • 4.5 V gate drive
Out |
Renesas |
|
RQJ0603LGDQA | Silicon P-Channel MOS FET RQJ0603LGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A)
• Low drive current • High speed switching • 4.5 V gate drive
Out |
Renesas |
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