डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQJ0602EGDQS | Silicon P-Channel MOS FET RQJ0602EGDQS
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 485 mΩ typ (VGS = –10 V, ID = –0.75 A)
• Low drive current • High speed switching • 4.5 V gate drive
O |
Renesas |
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RQJ0602EGDQS | Silicon P-Channel MOS FET | Renesas |
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RQJ0602EGDQA | Silicon P-Channel MOS FET | Renesas |
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