डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQJ0302NGDQA | Silicon P-Channel MOS FET RQJ0302NGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A)
• Low drive current • High speed switching • 4.5 V gate drive
Out |
Renesas |
|
RQJ0302NGDQA | Silicon P-Channel MOS FET | Renesas |
www.DataSheet.in | 2017 | संपर्क |