डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQJ0301HGDQS | Silicon P-Channel MOS FET RQJ0301HGDQS
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A)
• Low drive current • High speed switching • 4.5 V gate drive
Ou |
Renesas |
|
RQJ0301HGDQS | Silicon P-Channel MOS FET | Renesas |
www.DataSheet.in | 2017 | संपर्क |