डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RQJ0203WGDQA | Silicon P-Channel MOS FET RQJ0203WGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.5 V, ID = –1.1 A)
• Low drive current • High speed switching • 2.5 V gate drive
Ou |
Renesas |
|
RQJ0203WGDQA | Silicon P-Channel MOS FET | Renesas |
www.DataSheet.in | 2017 | संपर्क |