डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RM10B | SILICON RECTIFIER DIODES RM10 - RM10Z
PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIF |
EIC discrete Semiconductors |
|
RM10TA-M | MEDIUM POWER GENERAL USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
|
RM10TN-2H | Three Phase Diode Bridge Module (7 Amperes/1600 Volts) | Powerex Power Semiconductors |
|
RM10 | Silicon Diode | Sanken electric |
|
RM10 | SILICON RECTIFIER DIODES | EIC discrete Semiconductors |
|
RM10TN-2H | Three-Phase Diode Bridge Modules | Mitsubishi Electric Semiconductor |
|
RM10TA-24 | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
|
RM100DZ-H | HIGH POWER GENERAL USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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RM10TA-H | MEDIUM POWER GENERAL USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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RM10A | SILICON RECTIFIER DIODES | EIC discrete Semiconductors |
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RM10Z | SILICON RECTIFIER DIODES | EIC discrete Semiconductors |
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