डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RK7002 | Interface and switching (60V/ 115mA) Transistors
Interface and switching (60V, 115mA)
RK7002
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon |
Rohm |
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RK7002A | N-Channel Power Mosfet Production specification
4V Drive Nch MOS FET
FEATURES
Low on-resistance.
High ESD. High-speed switching.
Pb
Lead-free
Low-voltage drive(4V).
Drive circuits can be simple.
Parall |
GME |
|
RK7002A | Transistors RK7002A
Transistors
Switching (60V, 300mA)
RK7002A
!Features 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. |
Rohm |
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RK7002B | 2.5V Drive Nch MOSFET www.DataSheet4U.com
2.5V Drive Nch MOSFET
RK7002B
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
SST3
|
Rohm |
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RK7002BM | Nch 60V 250mA Small Signal MOSFET RK7002BM
Nch 60V 250mA Small Signal MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
60V 2.4Ω ±250mA 350mW
lFeatures
1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection |
ROHM |
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RK7002BMHZG | Nch 60V 250mA Small Signal MOSFET RK7002BMHZG
Nch 60V 250mA Small Signal MOSFET
Datasheet
AEC-Q101 Qualified
VDSS RDS(on)(Max.)
ID PD
60V 2.4Ω ±250mA 350mW
lFeatures
1) Very fast switching 2) Ultra low voltage drive (2.5V dr |
ROHM |
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