डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJP6065DPM | N-Channel IGBT Preliminary Datasheet
RJP6065DPM
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C) Gate to |
Renesas |
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RJP6065DPM | N-Channel IGBT | Renesas |
www.DataSheet.in | 2017 | संपर्क |