डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6034DPD-E0 | N-Channel Power MOSFET Preliminary Datasheet
RJK6034DPD-E0
600 V - 1 A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low leakage current H |
Renesas |
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RJK6034DPD-E0 | N-Channel Power MOSFET | Renesas |
www.DataSheet.in | 2017 | संपर्क |