RJK5026DPP डाटा शीट PDF( Datasheet )

www.DataSheet4U.com RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outli

Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low leakage current  High

RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Ou