RJK2017DPP डाटा शीट PDF( Datasheet )

RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package co

RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching O