डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK0655DPB | Silicon N Channel Power MOS FET RJK0655DPB
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Low drive current Low on-resistance
RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-fre |
Renesas Technology |
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RJK0655DPB | Silicon N Channel Power MOS FET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |