डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK0406JPE | Silicon N-Channel MOS FET RJK0406JPE
Silicon N Channel MOS FET High Speed Power Switching
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 1.65 m typ. High current devices : ID = 16 |
Renesas |
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RJK0406JPE | Silicon N-Channel MOS FET | Renesas |
www.DataSheet.in | 2017 | संपर्क |