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RJK03P9DPA | Built in SBD Dual N-channel Power MOS FET Preliminary Datasheet
RJK03P9DPA
MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
R07DS0907EJ0110 Rev.1.10
Nov 01, 2012
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Renesas Technology |
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RJK03P9DPA | Built in SBD Dual N-channel Power MOS FET | Renesas Technology |
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