डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK03M9DNS | Silicon N Channel Power MOS FET RJK03M9DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 9.2 m |
Renesas Technology |
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RJK03M9DNS | Silicon N Channel Power MOS FET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |