डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJH65T04BDPM-A0 | IGBT RJH65T04BDPM-A0
650V - 30A - IGBT Power Switching
Features
Trench gate and thin wafer technology Built in fast recovery diode in one package Low collector to emitter saturation voltage
VCE(sat) = 1. |
Renesas |
|
RJH65T04BDPM-A0 | IGBT | Renesas |
www.DataSheet.in | 2017 | संपर्क |