डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJH60F5DPK | Silicon N-Channel IGBT Preliminary Datasheet
RJH60F5DPK
Silicon N Channel IGBT High Speed Power Switching
R07DS0055EJ0300 Rev.3.00
Nov 24, 2010
Features
Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = |
Renesas Technology |
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RJH60F5DPK | Silicon N-Channel IGBT | Renesas Technology |
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RJH60F5DPQ-A0 | High Speed Power Switching | Renesas |
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