RJ1G08CGN डाटा शीट PDF( Datasheet )

RJ1G08CGN 　　Nch 40V 80A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 5.6mΩ ±80A 78W lFeatures 1) Low on - resistance 2) High power small mold package 　　(LPTL) 3) Pb-free plating ; RoHS compliant 4) 10

isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) ·100% avalanche tes