RG2 डाटा शीट PDF( Datasheet )

SANKEN ELECTRIC CO., LTD. １ Scope The present specifications shall apply to an RG2. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification RG2 ３ Flammability

RG2 - RG2Z PRV : 200 - 400 Volts Io : 1.2 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for hi

RG2Y-RG2A High Efficiency Rectifiers VOLTAGE RANGE: 70 --- 600 V CURRENT: 1.5 --- 1.0 A Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with fre

BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, lsopropand and similar solvent

RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave Voltage Current Superimposed Maximum Forward Vol

Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • High breakdown voltage (VRRM=600V). • High r

Thin film surface mount resistors RG series (This series now includes the former RGH series.) Specifications Dimensions Features Ultimate chip resistors: the result of all of our thin film technology exper