RCX080N25 डाटा शीट PDF( Datasheet )

RCX080N25 Nch 250V 8A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 600mW 8A 35W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

isc N-Channel MOSFET Transistor RCX080N25 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche test