डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RCJ120N20 | N-Channel MOSFET isc N-Channel MOSFET Transistor
RCJ120N20
FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 325mΩ(Max) ·100% avalanche te |
INCHANGE |
|
RCJ120N20 | Power MOSFET RCJ120N20
Nch 200V 12A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 325m 12A
52W
Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use |
ROHM |
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