डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RCJ081N20 | N-Channel MOSFET isc N-Channel MOSFET Transistor
RCJ081N20
FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.77Ω(Max) ·100% avalanche tes |
INCHANGE |
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RCJ081N20 | Power MOSFET RCJ081N20
Nch 200V 8.0A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 770mW
8.0A 40W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is e |
ROHM |
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