R8010ANX डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R8010ANX FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.56Ω(Max) ·100% avalanche tes

R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS RDS(on) (Max.) 800V 0.56W TO-220FM ID PD lFeatures 1) Low on-resistance. 10A 40W lInner circuit (1) (2) (3) for 2) Fast switching speed. 3)