R8002ANJ डाटा शीट PDF( Datasheet )

R8002ANJ 　　Nch 800V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOu

isc N-Channel MOSFET Transistor R8002ANJ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max) ·100% avalanche test

R8002ANJ FRG 　　Nch 800V 2A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating