R6535ENZ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6535ENZ FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 115mΩ(Max) ·100% avalanche tes

R6535ENZ 　　Nch 650V 35A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.115Ω ±35A 102W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant l

isc N-Channel MOSFET Transistor R6535ENZ1 FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 115mΩ(Max) ·100% avalanche te

R6535ENZ4 　　Nch 650V 35A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.115Ω ±35A 379W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutli