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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6520 | Peripheral Interface Adapter www.DataSheet.in
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Rockwell |
|
R6520ENJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6520ENJ
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 205mΩ(Max) ·100% avalanche tes |
INCHANGE |
|
R6520ENJ | Power MOSFET R6520ENJ
Nch 650V 20A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.205Ω ±20A 231W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
l |
ROHM |
|
R6520ENX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6520ENX
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 205mΩ(Max) ·100% avalanche tes |
INCHANGE |
|
R6520ENX | Power MOSFET R6520ENX
Nch 650V 20A Power MOSFET
Datasheet
lOutline
VDSS
650V
RDS(on)(Max.)
0.205Ω
ID
±20A
TO-220FM
PD
68W
lFeatures
1) Low on-resistance 2) Fast switc |
ROHM |
|
R6520ENZ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6520ENZ
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 205mΩ(Max) ·100% avalanche tes |
INCHANGE |
|
R6520ENZ | Power MOSFET R6520ENZ
Nch 650V 20A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.205Ω ±20A
68W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lO |
ROHM |
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