डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6515 | (R650x / R651x) Microprocessors w
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Rockwell |
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R6515ENJ | Power MOSFET R6515ENJ
Nch 650V 15A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.315Ω ±15A 184W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
l |
ROHM |
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R6515ENJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6515ENJ
FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 315mΩ(Max) ·100% avalanche tes |
INCHANGE |
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R6515ENX | Nch 650V 15A Power MOSFET R6515ENX
Nch 650V 15A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
650V 0.315Ω ±15A
60W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS c |
ROHM |
|
R6515ENX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6515ENX
FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 315mΩ(Max) ·100% avalanche tes |
INCHANGE |
|
R6515ENZ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6515ENZ
FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 315mΩ(Max) ·100% avalanche tes |
INCHANGE |
|
R6515ENZ | Power MOSFET R6515ENZ
Nch 650V 15A Power MOSFET
Datasheet
lOutline
VDSS
650V
TO-3PF
RDS(on)(Max.) ID PD
0.315Ω ±15A 60W
e lFeatures
1) Low on-resistance
t 2) Fast switching speed
3) Parallel use |
ROHM |
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