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R6507 डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

भाग संख्या विवरण मैन्युफैक्चरर्स PDF
R6507   (R650x / R651x) Microprocessors

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Rockwell
Rockwell
PDF
R6507ENJ   N-Channel MOSFET

isc N-Channel MOSFET Transistor R6507ENJ FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max) ·100% avalanche test
INCHANGE
INCHANGE
PDF
R6507ENJ   Power MOSFET

R6507ENJ   Nch 650V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.665Ω ±7A 78W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOut
ROHM
ROHM
PDF
R6507ENX   Power MOSFET

R6507ENX   Nch 650V 7A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 650V 0.665Ω ±7A 46W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS com
ROHM
ROHM
PDF
R6507ENX   N-Channel MOSFET

isc N-Channel MOSFET Transistor R6507ENX FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max) ·100% avalanche test
INCHANGE
INCHANGE
PDF
R6507KNJ   N-Channel MOSFET

isc N-Channel MOSFET Transistor R6507KNJ FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max) ·100% avalanche test
INCHANGE
INCHANGE
PDF
R6507KNJ   Power MOSFET

R6507KNJ   Nch 650V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.665Ω ±7A 78W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
ROHM
ROHM
PDF



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