डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6507 | (R650x / R651x) Microprocessors w
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Rockwell |
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R6507ENJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6507ENJ
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 665mΩ(Max) ·100% avalanche test |
INCHANGE |
|
R6507ENJ | Power MOSFET R6507ENJ
Nch 650V 7A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.665Ω
±7A 78W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOut |
ROHM |
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R6507ENX | Power MOSFET R6507ENX
Nch 650V 7A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
650V 0.665Ω
±7A 46W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS com |
ROHM |
|
R6507ENX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6507ENX
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 665mΩ(Max) ·100% avalanche test |
INCHANGE |
|
R6507KNJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6507KNJ
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 665mΩ(Max) ·100% avalanche test |
INCHANGE |
|
R6507KNJ | Power MOSFET R6507KNJ
Nch 650V 7A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.665Ω
±7A 78W
lFeatures
1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant |
ROHM |
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