R6015KNJ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6015KNJ FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tes

R6015KNJ 　　Nch 600V 15A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.29Ω ±15A 184W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS