R6011ENX डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6011ENX FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 390mΩ(Max) ·100% avalanche tes

R6011ENX 　　Nch 600V 11A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.39Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switch